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  • HIGH VOLTAGE OPTOCOUPLER HV801

    The HV801 is a high voltage optocoupler developed as a control element for High Voltage Power Supplies.
    It consists of a multiple junction high voltage diode, optically coupled to three infrared emitting LEDs in series. The photocurrent in the output diodes is proportional to the light produced by the LEDs. The ratio of the output photocurrent to the LED input current is the current transfer ratio (CTR) of the device.



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    產品詳情

    Control element for high voltage power supplies

    (Rev D5)

    Features
    Applications
    ? 5 V Control
    ? Photoelectron Microscopy
    ? 8 kV Bias Voltage
    ? Electrostatic Deflection Plates
    ? Current Transfer Ratio ≥0.6%
    ? Space instrumentation
    ? Low Leakage Current
    ? Electrostatic analyzers
    ? 12 kV Isolation Voltage
    ? High voltage power supplies
    ? Radiation Tolerant to 10rad(Si)
    ? Regulated current source
    ? Up to 100 V/μs slew rate (10 pF load)
    ? High Voltage relay
    ? Small footprint
    ? High Voltage bipolar amplifier
    ? Backward compatible to HV601B


    General Description

       The HV801 is a high voltage optocoupler developed as a control element for High Voltage Power Supplies.It consists of a multiple junction high voltage diode, optically coupled to three infrared emitting LEDs in series. The photocurrent in the output diodes is proportional to the light produced by the LEDs. The ratio of the output photocurrent to the LED input current is the current transfer ratio (CTR) of the device.
       The HV801 provides high breakdown voltage, low leakage current, and a fast slew rate, making it ideal for use in a wide range of high voltage power supply applications. It provides linear control of voltages up to 8 kV and is current controlled from a convenient 5 V source. It is supplied in a small size, high dielectric strength, space rated epoxy package.

    SPECIFICATIONS
    Input Characteristics
       The input (Pins 1 and 2) behaves as a diode with a nominal threshold voltage of 3.1 volts. Output current (Pins 3 and 4) is controlled by varying the input current in the range of 0 to 100 mA. Input current should be limited such that the total power dissipated in the device is less than 0.5 watt at ambient conditions. Consideration should be given to the input circuit such that the input reverse bias does not exceed 5 volts.
    Output Characteristics
       In the normal mode of operation, the output cathode (Pin 4) is more positive than the output anode (Pin 3). In this mode the output current is proportional to the input current. The current transfer ratio is guaranteed to be >0.6% at zero bias and 20 mA input current, at 25 °C. The CTR generally increases with bias voltage and input current, to a typical maximum of 2% to 4%. Output slew rate is typically 100 V/μs into a 10 pF load. If Pin 3 is made more positive than Pin 4, the output will act like a forward biased diode with a nominal threshold voltage of 3.5 volts.

       Amptek offers an HV801RH, or rad-hard, option. The light output of LEDs is well known to decrease with displacement damage, i.e., due to penetrating protons in space. The RH option uses an alternate LED, which has a lower initial light output but which decreases more slowly with proton fluence. The HV801RH CTR is >0.2%. The two parts are otherwise identical.


    Absolute Maximum Ratings (T=21°C)
    Input Current:
    Continuous
    Pulse (10 μs, 100 Hz)
    100 mA
    1 A
    Input Reverse Voltage
    5 V
    Junction Temperature
    100 °C
    Output Bias Voltage
    8 kV
    Operating Temperature
    (See Thermal Considerations next page)
    -35 °C to +100 °C
    Storage Temperature
    -35 °C to +100 °C

    Stress above those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to absolute maximum conditions for extended periods may affect device reliability.


    Electrical Characteristics (T=21°C)
    Parameter
    Symbol
    Conditions
    Min.
    Typ.
    Max.
    Units
    Reverse Breakdown Voltage
    VBR
    ID = 1 μA
    >10.0


    kV
    Current Transfer Ratio
    HV801
    HV801
    HV801RH
    HV801RH
    CTR

    Iin = 20mA, Vbias = 0V
    Iin = 20mA, Vbias = 6kV
    Iin = 20mA, Vbias = 0V
    Iin = 20mA, Vbias = 6kV

    0.6


    0.2


    1.6


    0.8

    %
    %
    %
    %
    Dark Current
    I D
    VB = 8 kV

    10.0
    250 
    nA
    Output Capacitance   
    CO
     VJ = 0 V

    8.0

    pF
    Input Voltage  
    Vin
     I IN = 20 mA

    4.0 

    V
    Isolation Capacitance
    CISO


    0.6

    pF
    Isolation Voltage
    VISO

    12.0


    kV

    HV801 and HV801RH OPTION A+ SCREENING
    1.
    Nondestructive Bond Pull (100%)
    MIL-STD-883, Method 2023
    2.
    Visual Inspection
    MIL-STD-883, Method 2017
    3.
    Encapsulation
    Low outgassing epoxy package
    4.
    Marking 
    Serial Number, Date Code, ID
    5.
    Electrical Test
    At +25 °C
    6.
    Temperature Cycling
    MIL-STD-883, Method 1010, (modified) T = -35 °C to 100 °C, 15cycles, 4 min. each extreme, 3 min.maximum transfer time
    7.
    Electrical Test
    At +25 °C
    8.
    Radiographic
    MIL-STD-883, Method 2012
    9.
    Burn-in
    MIL-STD-883, Method 1015, 320 hrs @ 90 °C
    10.
    Final Electrical Test
    At +80 °C, +25 °C and -35 °C
    QC Periodic Tests
    11.
    Life Test on sample devices
    1000 hours (total) Burn-In at +90 °C with additional interim and Final Electrical Tests at +80 °C, +25 °C and -35 °C
    12.
    Temperature Cycling
    100 cycles as in step number six above
    Engineering, non-flight units (no screening) may be available.Please contact Amptek for more information.
    TYPICAL PERFORMANCE
    Current Transfer Ratio

       As these plots show, the Current Transfer Ratio (CTR) increases as a function of input current and bias voltage and decreases with increasing temperature. The CTR of each HV801 is measured by Amptek to be >0.6% at ILED =20 mA, no bias voltage, and at 25 °C. 

       The CTR is not a linear or even a smooth function of bias or current. Because the HV801 is in the feedback loop, this is not important. Nonlinear devices, such as transistors, are commonly used for feedback. The circuit designer must insure that the loop has enough gain, under the worst case conditions, to meet the accuracy requirements.The detailed variation of the CTR with the various parameters is generally not critical because of its location in the

    feedback loop of the control circuit.
       The plots above show that, if the LED current is fixed and the bias voltage increased, the CTR increases as a series of steps. The steps occur when one of the junctions in the output diode stack begins to avalanche. The avalanche voltage is a function of LED current (increasing with ILED) and of temperature (increasing with temperature). The avalanche voltages will vary from one device to the next, as will the magnitude of the CTR increase and the sharpness of the avalanche onset. If the bias is fixed and the current increased, the CTR will increase fairly smoothly, unless the bias voltage is near one of the steps.
       The detailed shape of the CTR curve is not important to use the HV801: the circuit should be designed to provide sufficient loop gain at the lowest CTR, which will occur at the lowest LED current, lowest bias voltage, highest temperature, and with end of life displacement damage.
    Current Transfer Ratio (CTR) vsInput Current and Bias
    Current Transfer Ratio (CTR) Input Current and Bias
    TYPICAL PERFORMANCE (con’t)
    Dark Current
    The HV801 israted for a maximum of 8 kV bias.The maximum dark current at 8 kV is 250 nA but the average is under 10 nA at 25 °C. The dark current approximately doubles for every 10 °C increase in temperature. Each HV801 is tested at 10 kV,beyond itsrated voltage, to verify that breakdown voltage is >10 kV.Asseen in the plot, the dark current is nearly independent of bias at 8 kV and below, but increases to a typically value of 70 nA at 10 kV.




    Thermal Considerations
       The maximum power dissipation and derating considerations must be specified so that the TJ, the junctions of the diodes, do not exceed 100 °C.
    Application Example
       Consider an example where the four leads provide the thermal path to the PCB, assumed to be at ambient. This gives θJA = 15 °C/W for the HV stack and 37 °C/W for the LEDs. Assume Iin = 10 mA, with VF = 4 V, Vbias = 5 kV, and CTR = 2%, so Iout = 200 μA. The power dissipations will be 40 mW in the LEDs and 1 W in the HV diode stack.This yields a ΔT of 15 °C for the HV diode stack and 1.5 °C for the LEDs. This unit can be operated at an ambient
    temperature of 82 °C (printed circuit board temperature).

       Note that the CTR is a function of bias voltage, current, temperature, and exhibits

    manufacturing variability. The user must examine all these parameters closely if operation near the maximum junction temperature is anticipated.

       This calculation, though simple, does not represent the typical usage of an HV801. An HV801 is most often used to control rapidly a stepped voltage, i.e., biasing the deflection

    electrodes in an electrostatic analyzer. The current only flows for a brief period at the beginning of each step, i.e., there is a very low duty cycle. The total power dissipation is reduced greatly. Typical applications exhibit tens of mW of total power.


    TYPICAL PERFORMANCE (con’t)
    Radiation Damage
    Total Ionizing Dose: 100 krad (Si).
       The HV801 and HV801RH were tested to 100 krads (Si), using 60Co gamma-rays. The CTR for the HV801 decreased by 7.6%. The CTR for the HV801RH was unchanged. No measurable change was found for the other parameters.
    Displacement Damage
       As is well known, the LEDs are generally susceptible to displacement damage. The plot below shows typical results which are expected for the HV801 and the HV801RH when tested with 50 MeV protons. These results here are typical of the both the packaged devices and the LEDs used in the two parts. The HV diode stack is not susceptible to displacement damage at these levels.



    APPLICATIONS for HV801


    Simplified Bipolar Power Supply
    Simplified Schematic of a Low Power High Voltage Circuit Using the HV801



    Burn-in Circuit



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